0.5W X-band SiGe PA with integrated double-tuned transformers

Eyal Harir, Eran Socher

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Power amplifier (PA) for a next generation X band T/R-modules in active array antennas is realized using low cost, high yield and high integration 0.18μm SiGe-HBT Technology. A single stage class AB cascode PA using only highspeed HBTs and double tuned transformers at the input and output matching networks with excellent performances has been designed. The PA achieve peak output power of 27dBm and maximum 36 % power added efficiency (PAE). The core RF size is 0.85mm × 0.56mm without pads and low frequency decoupling capacitors exhibiting an output power density of 1.0 W/mm2. To our knowledge, those values are the highest in SiGe-HBT power amplifiers.

Original languageEnglish
Title of host publication2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013
DOIs
StatePublished - 2013
Event2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013 - Seattle, WA, United States
Duration: 2 Jun 20137 Jun 2013

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013
Country/TerritoryUnited States
CitySeattle, WA
Period2/06/137/06/13

Keywords

  • Cascode
  • Heterojunction bipolar transistor (HBT)
  • Power amplifier (PA)
  • Silicon germanium (SiGe)

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