1975 …2023

Research activity per year

Network

M. Leibovitch

  • Gal-El (MMIC)
  • Tel Aviv University
  • Elta Electronics Industries Ltd.
  • City University of New York

External person

L. Kronik

  • Tel Aviv University
  • Technion-Israel Institute of Technology
  • Weizmann Institute of Science
  • University of Minnesota Twin Cities

External person

M. Gurfinkel

  • University of Maryland, College Park
  • Tel Aviv University
  • National Institute of Standards and Technology

External person

Larisa Burstein

  • Tel Aviv University

External person

J. Bregman

  • Tel Aviv University

External person

Y. Fefer

  • Freescale Semiconductor
  • Tel Aviv University
  • University of Maryland, College Park

External person

I. Shalish

  • Tel Aviv University
  • Technion-Israel Institute of Technology
  • Harvard University
  • Ben-Gurion University of the Negev

External person

B. Mishori

  • Tel Aviv University
  • Ben-Gurion University of the Negev

External person

E. Fefer

  • Tel Aviv University

External person

Y. Zidon

  • Tel Aviv University

External person

J. S. Suehle

  • National Institute of Standards and Technology

External person

J. B. Bernstein

  • University of Maryland, College Park
  • Bar-Ilan University

External person

Z. Calahorra

  • RAFAEL Armament Development Authority Ltd.
  • Tel Aviv University
  • SemiConductor Devices

External person

S. Solodky

  • Tel Aviv University
  • Gal-El (MMIC)

External person

L. J. Brillson

  • Xerox
  • Tel Aviv University

External person

Nurit Ashkenasy

  • Ben-Gurion University of the Negev
  • Tel Aviv University
  • Scripps Research Institute
  • University of Florida

External person

A. Friedenberg

  • Tel Aviv University

External person

J. H. Weaver

  • University of Minnesota Twin Cities

External person

Th Dittrich

  • Helmholtz Centre Berlin for Materials and Energy

External person

A. J. Lelis

  • United States Army Research Laboratory
  • Tel Aviv University

External person

P. Livshits

  • Bar-Ilan University
  • Tel Aviv University
  • Freescale Semiconductor

External person

Jihua Yang

  • University of Otago
  • Tel Aviv University
  • Harvard University

External person

T. Baksht

  • Tel Aviv University
  • Gal-El (MMIC)

External person

D. Habersat

  • United States Army Research Laboratory
  • Tel Aviv University

External person

V. Korobov

  • Tel Aviv University

External person

David Lichtman

  • University of Wisconsin-Milwaukee

External person

D. Faiman

  • Ben-Gurion University of the Negev

External person

E. A. Katz

  • Ben-Gurion University of the Negev

External person

H. D. Xiong

  • National Institute of Standards and Technology

External person

M. Eizenberg

  • Technion-Israel Institute of Technology

External person

Sergey Sofer

  • Freescale Semiconductor

External person

N. Goldsman

  • University of Maryland, College Park

External person

J. L. Regolini

  • France Telecom-Centre d'Etudes des Telecommunications
  • Orange Labs

External person

Alon Stopel

  • Tel Aviv University

External person

F. Boscherini

  • University of Minnesota Twin Cities

External person

C. Capasso

  • University of Minnesota Twin Cities

External person

G. Bunin

  • Gal-El (MMIC)

External person

J. Rappich

  • Helmholtz Centre Berlin for Materials and Energy

External person

D. M. Hill

  • University of Minnesota Twin Cities

External person

F. Xu

  • University of Minnesota Twin Cities

External person

A. Merson

  • Tel Aviv University

External person

J. Salzman

  • Tel Aviv University
  • Technion-Israel Institute of Technology
  • California Institute of Technology
  • Microelectronics Research Center
  • California Institute of Technology Division of Engineering and Applied Science

External person

Zahava Barkay

  • Tel Aviv University
  • Rabin Medical Center Israel
  • Ultrasound Unit
  • Ultrasound Div., Rabin Med. C.

External person

A. Rozen

  • Tel Aviv University
  • Freescale Semiconductor

External person

A. Heller

  • Lucent
  • Tel Aviv University
  • University of Texas at Austin

External person

Enrique Grunbaum

  • Tel Aviv University
  • Boston University
  • Boston University

External person

A. Khramtsov

  • Tel Aviv University
  • Ben-Gurion University of the Negev

External person

Falko P. Netzer

  • University of Graz
  • Institut für Experimentalphysik

External person

A. Golan

  • Tel Aviv University

External person

K. Cheung

  • National Institute of Standards and Technology

External person

Gary Hodes

  • Weizmann Institute of Science
  • The Electrochemical Society

External person

N. Kinrot

  • Tel Aviv University

External person

A. Margulis

  • Freescale Semiconductor

External person

A. Zemel

  • Soreq Nuclear Research Center

External person

S. Shtutina

  • Ben-Gurion University of the Negev

External person

E. Moons

  • Weizmann Institute of Science

External person

I. Hallakoun

  • Gal-El (MMIC)
  • Elta Electronics Industries Ltd.
  • Tel Aviv University

External person

I. Balberg

  • Hebrew University of Jerusalem

External person

Gabby Sarusi

  • Ben-Gurion University of the Negev
  • Soreq Nuclear Research Center

External person

S. P. Grinberg

  • Tel Aviv University

External person

J. Kaplun

  • Gal-El (MMIC)

External person

G. Segal

  • Tel Aviv University

External person

D. Eger

  • Soreq Nuclear Research Center
  • Applied Physics Division
  • Electro-Optics Division
  • NRC
  • Nuclear Research Center-Negev
  • Soreq NRC

External person

Y. Weizman

  • Freescale Semiconductor
  • Bar-Ilan University

External person

S. Goren

  • Ben-Gurion University of the Negev

External person

David Cahen

  • Weizmann Institute of Science
  • Bar-Ilan University

External person

K. Barnham

  • Imperial College London
  • Lawrence Berkeley National Laboratory
  • University of California at Berkeley

External person

R. Goshen

  • RAFAEL Armament Development Authority Ltd.
  • Technion-Israel Institute of Technology

External person

J. Beier

  • Weizmann Institute of Science

External person

Fred H. Pollak

  • City University of New York

External person

A. Rysin

  • Tel Aviv University
  • Freescale Semiconductor

External person

Ralf Hunger

  • Technische Universität Darmstadt
  • Helmholtz Centre Berlin for Materials and Energy

External person

S. Hava

  • Tel Aviv University
  • Ben-Gurion University of the Negev

External person

C. M. Aldao

  • University of Minnesota Twin Cities

External person

S. Potbhare

  • University of Maryland, College Park

External person

P. Wilshaw

  • University of Oxford

External person

A. James McQuillan

  • University of Otago

External person

Avner Rothschild

  • Technion-Israel Institute of Technology

External person

M. Mazzer

  • Imperial College London

External person

Aharon Kapitulnik

  • Tel Aviv University
  • University of California at Santa Barbara
  • Stanford University

External person

D. B. Bushnell

  • Imperial College London

External person

H. Öfner

  • University of Graz
  • Institut für Experimentalphysik

External person

Y. Knafo

  • Tel Aviv University

External person

M. Borenshtein

  • Freescale Semiconductor

External person

Svetlozar L. Surnev

  • University of Graz
  • Institut für Experimentalphysik

External person

F. Trincat

  • France Telecom-Centre d'Etudes des Telecommunications
  • Orange Labs

External person

Y. Lubianiker

  • Hebrew University of Jerusalem
  • Tel Aviv University
  • University of Oregon

External person

Y. Komem

  • Technion-Israel Institute of Technology
  • Columbia University

External person

K. Roodenko

  • TU Dortmund University
  • Max-IR Labs
  • University of Texas at Dallas
  • Tel Aviv University
  • Max-IR Labs Llc
  • Department Berlin

External person

D. Hariskos

  • University of Stuttgart

External person

I. Toledo

  • Gal-El (MMIC)

External person

W. Riedl

  • Siemens

External person

J. Kim

  • National Institute of Standards and Technology
  • University of Maryland, College Park

External person

C. E.M. De Oliveira

  • Tel Aviv University

External person

J. Partee

  • Ames Laboratory

External person

D. Gal

  • Weizmann Institute of Science

External person

Prakhya Ram

  • City University of New York

External person

K. Hinrichs

  • TU Dortmund University
  • Department Berlin

External person

E. Baruch

  • Freescale Semiconductor

External person

Keith C. Gordon

  • University of Otago

External person

N. J. Ekins-Daukes

  • Imperial College London

External person

S. M. Cox

  • University of Wisconsin-Milwaukee

External person

H. W. Schock

  • Helmholtz Centre Berlin for Materials and Energy
  • University of Stuttgart

External person

J. Shinar

  • Ames Laboratory

External person

M. Gensch

  • TU Dortmund University
  • Department Berlin

External person

J. Horst

  • National Institute of Standards and Technology

External person

A. Shames

  • Ben-Gurion University of the Negev

External person

J. B. Bemstein

  • University of Maryland, College Park

External person

M. Barkai

  • Tel Aviv University
  • Luz Industries Israei

External person

D. Heh

  • SEMATECH

External person

O. Katz

  • Tel Aviv University

External person

Wolfram Jaegermann

  • Technische Universität Darmstadt

External person

Dwight C. Streit

  • Northrop Grumman

External person

L. Guimaraes

  • NOVA University Lisbon

External person

Ronen A. Berechman

  • Tel Aviv University

External person

Q. Li

  • National Institute of Standards and Technology

External person

B. R. Thacker

  • National Renewable Energy Laboratory
  • Natl Renewable Energy Office

External person

G. Margaritondo

  • University of Wisconsin-Madison
  • University of Wisconsin

External person

R. Klenk

  • University of Stuttgart

External person

J. A. Del Alamo

  • Massachusetts Institute of Technology

External person

J. Gordon

  • Tel Aviv University

External person

R. B. McQuistan

  • University of Wisconsin-Milwaukee

External person

Or Haim Chaulker

  • Ben-Gurion University of the Negev

External person

Nitzan Shauloff

  • Ben-Gurion University of the Negev

External person

Horst Kisch

  • Friedrich-Alexander University Erlangen-Nürnberg

External person

A. Devenyi

  • Institut de Physique des Materiaux, Bucarest-Magurele

External person

M. B. Oron

  • Soreq Nuclear Research Center
  • NRC
  • Nuclear Research Center-Negev
  • Elbit Systems Electro-Optics Elop Limited
  • Soreq NRC

External person

M. Evenor

  • Tel Aviv University
  • Los Alamos National Laboratory

External person

Y. Kagan

  • Rotem Industries Ltd.

External person

Steven G. Anderson

  • University of Minnesota Twin Cities

External person

D. Gerlich

  • Tel Aviv University

External person

A. Levakov

  • Tel Aviv University

External person

S. Rotter

  • Tel Aviv University
  • Soreq Nuclear Research Center

External person

A. Belu-Manan

  • Institut de Physique des Materiaux, Bucarest-Magurele

External person

Richard A. Beaupre

  • General Electric

External person

David S. Warren

  • University of Otago

External person

A. Ravid

  • Soreq Nuclear Research Center

External person

Yury Turkulets

  • Ben-Gurion University of the Negev

External person

L. Stolt

  • Uppsala University

External person

E. Ganor

  • Tel Aviv University
  • Asaf Harofe Medical Center
  • Israel Ministry of the Environmental Protection

External person

Christian Pettenkofer

  • Helmholtz Centre Berlin for Materials and Energy

External person

G. Brémond

  • Institut national des sciences appliquées Lyon

External person

I. Ortenberg

  • Gal-El (MMIC)

External person

H. Shaim

  • Tel Aviv University

External person

H. Aharoni

  • Ben-Gurion University of the Negev

External person

B. Meyler

  • Technion-Israel Institute of Technology

External person

Kevin S. Matocha

  • University of Maryland, College Park

External person

D. Huppert

  • Tel Aviv University

External person

R. Choi

  • SEMATECH

External person

Z. Zussman

  • Soreq Nuclear Research Center

External person

M. C. Hanna

  • National Renewable Energy Laboratory
  • National Renewable Laboratory

External person

J. Nelson

  • Imperial College London
  • Brown University

External person

P. Bessler-Podorowski

  • Tel Aviv University

External person

Y. Avigal

  • Tel Aviv University

External person

Michael Talmor

  • University of Maryland, College Park

External person

A. D. Katnani

  • University of Wisconsin-Madison
  • University of Wisconsin

External person

B. M. Trafas

  • University of Minnesota Twin Cities

External person

I. Sagnes

  • France Telecom-Centre d'Etudes des Telecommunications

External person

B. Ber

  • RAS - Ioffe Physico Technical Institute

External person

Xiaojun Li

  • University of Maryland, College Park

External person

M. Del Giudice

  • University of Minnesota Twin Cities

External person

M. A. Strzhemechny

  • NASU - B. Verkin Institute for Low Temperature Physics and Engineering

External person

X. Wang

  • Semiconductor Laser International

External person

Jörg Walters

  • University of Maryland, College Park

External person

B. R. Bennett

  • Naval Research Laboratory

External person

K. Faleev

  • RAS - Ioffe Physico Technical Institute

External person

A. Hacham

  • Soreq Nuclear Research Center

External person

Raz Jelinek

  • Ben-Gurion University of the Negev
  • Ben Gurion University of the Negen

External person

Uri El-Hanany

  • Imarad Imaging Systems Ltd.
  • Soreq Nuclear Research Center
  • Technion-Israel Institute of Technology

External person

Zhangda Lin

  • University of Minnesota Twin Cities

External person

L. Otero

  • Universidad Nacional de Rio Cuarto

External person

Amit Teller

  • Tel Aviv University
  • Weizmann Institute of Science
  • The Cyprus Institute

External person

A. R. Clawson

  • University of California at San Diego

External person

B. Hadad

  • Tel Aviv University

External person

P. A. Tove

  • Uppsala University

External person

E. Fortunato

  • NOVA University Lisbon

External person

D. Zushinskiy

  • RAS - Ioffe Physico Technical Institute

External person

H. Norde

  • Uppsala University

External person

Yuval Gefen

  • Weizmann Institute of Science
  • University of California at Santa Barbara
  • Tel Aviv University
  • University of Michigan, Ann Arbor
  • University of Cologne
  • University of Washington

External person

C. Richter

  • National Institute of Standards and Technology

External person

M. Vazokha

  • Tel Aviv University

External person

S. Alterovitz

  • Tel Aviv University

External person

S. Gorer

  • Weizmann Institute of Science

External person

E. Weissman

  • Tel Aviv University

External person

Greg Dunne

  • General Electric

External person

A. G. Güell

  • University of Barcelona

External person

A. Belu-Marian

  • Institut de Physique des Materiaux, Bucarest-Magurele

External person

A. Levakov

  • Tel Aviv University

External person

A. J. Nozik

  • National Renewable Energy Laboratory
  • Natl Renewable Energy Office

External person

Helmut Fner

  • University of Graz

External person

N. Esser

  • TU Dortmund University
  • Department Berlin

External person

Dudi Deutsch

  • Weizmann Institute of Science
  • Tel Aviv University

External person

A. Fainbrun

  • Tel Aviv University

External person

I. M. Vitomirov

  • University of Minnesota Twin Cities

External person

Shmuel Fishman

  • Technion-Israel Institute of Technology
  • Tel Aviv University
  • Cornell University

External person

S. Z. Weisz

  • University of Puerto Rico

External person

M. Manciu

  • Institut de Physique des Materiaux, Bucarest-Magurele

External person

M. A. Bica De Moraes

  • Universidade Estadual de Campinas

External person

G. T. Burnham

  • Semiconductor Laser International

External person

Boris Revzin

  • Tel Aviv University

External person

U. Schade

  • Helmholtz Centre Berlin for Materials and Energy

External person

Shlomo Ron

  • Soreq Nuclear Research Center
  • Israel Atomic Energy Commission
  • Department of Physics and Applied Mathematics, SOREQ NRC

External person

D. Bensahel

  • France Telecom-Centre d'Etudes des Telecommunications

External person

G. Cinader

  • Soreq Nuclear Research Center

External person

O. Mantel

  • Freescale Semiconductor

External person

A. Isakina

  • NASU - B. Verkin Institute for Low Temperature Physics and Engineering

External person

Isabelle Berbezier

  • Campus de St Jérôme – Case 142 – 13397
  • Orange Labs

External person

F. A. Katz

  • Ben-Gurion University of the Negev

External person

S. Levin

  • Tel Aviv University

External person

S. Zamir

  • Technion-Israel Institute of Technology

External person

R. Ben-Or

  • Tel Aviv University

External person

A. Sher

  • Electro-Optics Division
  • Soreq Nuclear Research Center

External person

Michael Wojtowicz

  • Northrop Grumman

External person

R. Martins

  • NOVA University Lisbon

External person

C. M. Hanson

  • Space and Naval Warfare Systems Center

External person

Mark Leibovich

  • Gal-El (MMIC)

External person

M. Gomez

  • University of Puerto Rico

External person

O. B. Aphek

  • Tel Aviv University

External person

S. Sade

  • Tel Aviv University
  • Meir Hospital Sapir Medical Center
  • Freescale Semiconductor

External person