Keyphrases
Annealing
16%
Auger Electron Spectroscopy
45%
Band Gap
14%
Cadmium Telluride
9%
Charge Separation
8%
Chemisorption
8%
Conductivity Measurement
8%
Desorption
13%
Electrical Properties
12%
Electronic Properties
15%
Electronic Structure
18%
GaAs(110)
8%
Gallium Arsenide
25%
Gap States
23%
Granular Superconductors
9%
Heterojunction
11%
Indium Oxide
18%
InP HEMT
9%
InP(110)
11%
InSb
31%
Interface States
15%
Lead Iodide
8%
Native Oxide
9%
Overlayer
16%
Oxides
13%
Oxygen Pressure
9%
P-type
9%
Photodesorption
12%
Photoemission
10%
Room Temperature
12%
Schottky Barrier Height
8%
Schottky Contact
8%
Semiconductor Interfaces
9%
Semiconductors
17%
Si(111)
9%
Silica
11%
Spectroscopic Measurement
12%
Substrate Temperature
9%
Surface Layer
8%
Surface Photovoltage
35%
Surface Photovoltage Spectroscopy
100%
Surface Recombination Velocity
22%
Surface States
36%
Thermal Stability
8%
Time-resolved Photoluminescence
9%
Ultra-high Vacuum
10%
Undoped
8%
X-ray Photoelectron Spectroscopy
11%
Yellow Luminescence
10%
Zinc Porphyrin
9%
Material Science
Aluminium Gallium Arsenide
6%
Anodizing
5%
Auger Electron Spectroscopy
40%
Capacitance
6%
Carbon Dioxide
7%
Charge Carrier
7%
Chemical Vapor Deposition
7%
Chemisorption
8%
Density
17%
Desorption
14%
Electrical Resistivity
9%
Electron Mobility
11%
Electronic Property
10%
Electronic Structure
35%
Film
67%
Gallium Arsenide
41%
Grain Boundary
5%
Heterojunction
20%
III-V Semiconductor
7%
Indium
14%
Liquid Phase Epitaxy
8%
Luminescence
18%
Mechanical Strength
7%
Metal Interface
10%
Metal Oxide
5%
Metal-Oxide-Semiconductor Field-Effect Transistor
9%
Monolayers
7%
Nanocrystalline
7%
Oxidation Reaction
14%
Oxide Compound
35%
Oxide Film
8%
Oxide Semiconductor
7%
Percolation
7%
Photoconductivity
7%
Photoemission Spectroscopy
14%
Photoluminescence
26%
Photovoltaics
6%
Quantum Well
14%
Scanning Electron Microscopy
8%
Schottky Barrier
18%
Silicon
10%
Silver
5%
Single Crystal
6%
Solar Cell
11%
Superconducting Material
11%
Thermal Stability
7%
Thin Films
48%
Titanium Dioxide
10%
Transistor
15%
ZnO
10%
Engineering
Aluminium Gallium Arsenide
6%
Anodization
6%
Barrier Height
9%
Deep Level
7%
Dielectrics
5%
Electric Field
5%
Electrostatic Discharge
7%
Empirical Model
5%
Energy Engineering
6%
Energy Gap
12%
Epitaxial Layer
7%
Gallium Arsenide
29%
Gate Oxide
5%
Heterojunctions
5%
High Resolution
8%
Interface State
9%
Interface Trap
6%
Line Shape
6%
Liquid Phase Epitaxy
7%
Metal-Oxide-Semiconductor Field-Effect Transistor
19%
Oxide Film
5%
Oxide Layer
8%
Photoemission
22%
Photovoltage
6%
Picosecond
5%
Polar Angle
5%
Polycrystalline
6%
Quantum Well
14%
Room Temperature
10%
Schottky Barrier
11%
Solar Cell
8%
Substrate Temperature
8%
Surface Photovoltage
74%
Surface Recombination Velocity
24%
Surface State
15%
Systems Performance
5%
Thin Films
26%
Transients
6%
Valence Band
6%