Keyphrases
Surface Photovoltage Spectroscopy
100%
Auger Electron Spectroscopy
45%
Surface States
36%
Surface Photovoltage
35%
InSb
31%
Gallium Arsenide
25%
Gap States
23%
Surface Recombination Velocity
22%
Electronic Structure
18%
Indium Oxide
18%
Semiconductors
17%
Overlayer
16%
Annealing
16%
Electronic Properties
15%
Interface States
15%
Band Gap
14%
Desorption
13%
Oxides
13%
Electrical Properties
12%
Spectroscopic Measurement
12%
Photodesorption
12%
Room Temperature
12%
Silica
11%
Heterojunction
11%
InP(110)
11%
X-ray Photoelectron Spectroscopy
11%
Photoemission
10%
Yellow Luminescence
10%
Ultra-high Vacuum
10%
Time-resolved Photoluminescence
9%
Si(111)
9%
Semiconductor Interfaces
9%
Cadmium Telluride
9%
Granular Superconductors
9%
InP HEMT
9%
Zinc Porphyrin
9%
Native Oxide
9%
Oxygen Pressure
9%
P-type
9%
Substrate Temperature
9%
GaAs(110)
8%
Conductivity Measurement
8%
Chemisorption
8%
Surface Layer
8%
Schottky Barrier Height
8%
Undoped
8%
Charge Separation
8%
Thermal Stability
8%
Lead Iodide
8%
Schottky Contact
8%
Material Science
Film
67%
Thin Films
48%
Gallium Arsenide
41%
Auger Electron Spectroscopy
40%
Oxide Compound
35%
Electronic Structure
35%
Photoluminescence
26%
Heterojunction
20%
Schottky Barrier
18%
Luminescence
18%
Density
17%
Transistor
15%
Indium
14%
Oxidation Reaction
14%
Photoemission Spectroscopy
14%
Desorption
14%
Quantum Well
14%
Electron Mobility
11%
Superconducting Material
11%
Solar Cell
11%
ZnO
10%
Silicon
10%
Titanium Dioxide
10%
Electronic Property
10%
Metal Interface
10%
Metal-Oxide-Semiconductor Field-Effect Transistor
9%
Electrical Resistivity
9%
Chemisorption
8%
Oxide Film
8%
Liquid Phase Epitaxy
8%
Scanning Electron Microscopy
8%
Charge Carrier
7%
Oxide Semiconductor
7%
Photoconductivity
7%
Carbon Dioxide
7%
Nanocrystalline
7%
Chemical Vapor Deposition
7%
Thermal Stability
7%
Percolation
7%
Mechanical Strength
7%
III-V Semiconductor
7%
Monolayers
7%
Photovoltaics
6%
Capacitance
6%
Single Crystal
6%
Aluminium Gallium Arsenide
6%
Metal Oxide
5%
Anodizing
5%
Grain Boundary
5%
Silver
5%
Engineering
Surface Photovoltage
74%
Gallium Arsenide
29%
Thin Films
26%
Surface Recombination Velocity
24%
Photoemission
22%
Metal-Oxide-Semiconductor Field-Effect Transistor
19%
Surface State
15%
Quantum Well
14%
Energy Gap
12%
Schottky Barrier
11%
Room Temperature
10%
Barrier Height
9%
Interface State
9%
Substrate Temperature
8%
Solar Cell
8%
Oxide Layer
8%
High Resolution
8%
Liquid Phase Epitaxy
7%
Electrostatic Discharge
7%
Epitaxial Layer
7%
Deep Level
7%
Transients
6%
Polycrystalline
6%
Line Shape
6%
Anodization
6%
Valence Band
6%
Photovoltage
6%
Interface Trap
6%
Energy Engineering
6%
Aluminium Gallium Arsenide
6%
Electric Field
5%
Polar Angle
5%
Gate Oxide
5%
Heterojunctions
5%
Empirical Model
5%
Systems Performance
5%
Oxide Film
5%
Picosecond
5%
Dielectrics
5%
