Keyphrases
Aluminum Oxide
16%
Annealing
18%
Antiferromagnetic
16%
Charge Distribution
18%
Co2MnSi
16%
Cobalt
18%
CoFe
15%
Copper Metallization
27%
Diffusion Barrier
26%
Electroless
30%
Electron Holography
13%
Epitaxial
90%
Exchange Bias
36%
Extended Abstracts
13%
FeCo
32%
Ferromagnet
13%
Ferromagnetic Layer
23%
GaAs(001)
13%
Grain Boundary
20%
High-resolution Electron Energy Loss Spectroscopy (HREELS)
17%
In Situ
13%
IrMn
15%
Lorentz Transmission Electron Microscopy
19%
Magnesium Aluminate Spinel
13%
Magnetic Field
13%
Magnetic Properties
48%
Magnetic Structure
16%
Magnetic Tunnel Junction
44%
Magnetization Reversal Mechanism
16%
Mean Inner Potential
18%
MgO(001)
24%
Microanalysis
13%
Microscopy
13%
MnSi
20%
Molecular Beam Epitaxy
18%
Nanoislands
13%
Nanostructures
14%
Off-axis Electron Holography
27%
Si(111)
18%
Silica
14%
Spin Injection
16%
Spin-dependent Tunneling
20%
Sputter-deposited
18%
Structural Characterization
18%
Temperature Effect
15%
Transmission Electron Microscope
13%
Transmission Electron Microscopy
36%
Transport of Intensity Equation
14%
Tunneling Magnetoresistance
36%
Ultrathin
18%
Material Science
Aluminum Oxide
18%
Amorphous Material
6%
Anisotropy
33%
Annealing
19%
Capacitor
9%
Charge Carrier
7%
Cobalt
20%
Crystal Structure
9%
Density
24%
Domain Wall
6%
Electrical Resistivity
6%
Electron Diffraction
6%
Electron Energy Loss Spectrometry
15%
Electron Microscopy
6%
Epitaxy
7%
Film
80%
Finite Element Method
12%
Focused Ion Beam
6%
Gallium Arsenide
13%
Giant Magnetoresistance
6%
Grain Boundary
21%
High-Resolution Transmission Electron Microscopy
14%
Magnesium
14%
Magnesium Oxide
100%
Magnetic Property
45%
Magnetic Structure
20%
Magneto-Transport
9%
Materials Property
7%
Metal Oxide
13%
Molecular Beam Epitaxy
11%
Nanocrystalline
7%
Nanoparticle
9%
Nanostructure
23%
Oxide Compound
27%
Oxide Semiconductor
13%
Permalloy
12%
Short-Range Order
10%
Silicide
16%
Silicon
25%
Single Crystal
9%
Spin Polarization
13%
Surface (Surface Science)
47%
Thermal Stress
9%
Thick Films
8%
Thin Films
74%
Transistor
9%
Transition Metal
5%
Transmission Electron Microscopy
58%
Tunneling Magnetoresistance
32%
X-Ray Photoelectron Spectroscopy
10%
Engineering
Anisotropic
6%
Atomic Layer Deposition
6%
Band Gap
6%
Barrier Property
7%
Bias Field
6%
Charge Carrier
7%
Deposited Film
13%
Diffusion Barrier
23%
Diffusivity
6%
Domain Wall
10%
Electroless Plating
7%
Electron Energy
10%
Energy Dissipation
9%
Face-Centered Cubic
9%
Ferromagnet
6%
Focused Ion Beam
9%
Gallium Arsenide
9%
Geometry Optimization
8%
Good Agreement
6%
Grain Boundary Diffusion
7%
Hexagonal Close Packed
9%
High Resolution
6%
Interlayer
5%
Lattice Constant
9%
Lattice Parameter
9%
Low-Temperature
6%
Magnetic Moment
8%
Magnetic Tunnel Junction
15%
Magnetization Reversal
9%
Magnetoelectronics
5%
Mean Free Path
9%
Metal Oxide Semiconductor
9%
Metallizations
23%
Micromagnetics
10%
Minority Carriers
6%
Nanocrystalline
10%
Nanometre
11%
Oxide System
5%
Passivation
7%
Polycrystalline
19%
Ray Diffraction
11%
Ray Photoelectron Spectroscopy
8%
Resistance Ratio
9%
Seed Layer
9%
Silicon Dioxide
10%
Thermal Stress
9%
Thin Films
50%
Tunnel
6%
Tunnel Construction
12%
Vortex
6%