Equipments Details
Description
Manufacturer and model:
NEXTRAL 860 HDP RIE.
Description:
Various high and low densities Fluorine chemistry-based plasma Reactive-ion etchers (RIE) for insulators, semimetals and semiconductor materials (crystalline, glasses and ceramics).
Specification:
Plasma potential: Heat transfers through helium pressure between devices and cathode.
Si etching: 10 µm/min.
The typical etching rate of silicon: ~15 nm/min.
The typical etching rate of silicon oxide is ~25 nm/min.
The typical etching rate of silicon nitride is 20 nm/min.
Width measurements during usage.
Optical control of thickness.
Process gas available - H2, He, Ar, SF6, CF3, CH4
Location:
Engineering Cleanroom, Wolfson building of Electrical Engineering.
NEXTRAL 860 HDP RIE.
Description:
Various high and low densities Fluorine chemistry-based plasma Reactive-ion etchers (RIE) for insulators, semimetals and semiconductor materials (crystalline, glasses and ceramics).
Specification:
Plasma potential: Heat transfers through helium pressure between devices and cathode.
Si etching: 10 µm/min.
The typical etching rate of silicon: ~15 nm/min.
The typical etching rate of silicon oxide is ~25 nm/min.
The typical etching rate of silicon nitride is 20 nm/min.
Width measurements during usage.
Optical control of thickness.
Process gas available - H2, He, Ar, SF6, CF3, CH4
Location:
Engineering Cleanroom, Wolfson building of Electrical Engineering.
×
![]()
Fingerprint
Explore the research areas in which this equipment has been used. These labels are generated based on the related outputs. Together they form a unique fingerprint.