Equipments Details
Description
Manufacturer and model:
JIPELEC JETFIRST 100C.
Description:
Rapid Thermal Processing is a rapid heating process of a single wafer using lamp base heating for a short time, in order to affect its electrical properties.
Specification:
Base pressure is 10-6 Torr.
Gases: N2, O2, Ar and Forming Gas.
Max temperature is 1100oC.
Minimum pulse width: 1s.
​Location:
Engineering Cleanroom, Wolfson Building of Electrical Engineering​.
JIPELEC JETFIRST 100C.
Description:
Rapid Thermal Processing is a rapid heating process of a single wafer using lamp base heating for a short time, in order to affect its electrical properties.
Specification:
Base pressure is 10-6 Torr.
Gases: N2, O2, Ar and Forming Gas.
Max temperature is 1100oC.
Minimum pulse width: 1s.
​Location:
Engineering Cleanroom, Wolfson Building of Electrical Engineering​.
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