Equipments Details
Description
Manufacturer and model:
Plasma Enhanced CVD – PlasmaTh SLR790.
Description:
Plasma-enhanced chemical vapor deposition providing low stressed silicon nitride, silicon dioxide and silicon oxynitride thin films.
Materials:
SiO2, alpha-Si, and SiNx.
Specification:
Up to 8‘’ wafers.
No load lock.
Max temperature 350˚C.
Base pressure 10x10-3 Torr.
Location:
Engineering Cleanroom, Wolfson building of Electrical Engineering.
Plasma Enhanced CVD – PlasmaTh SLR790.
Description:
Plasma-enhanced chemical vapor deposition providing low stressed silicon nitride, silicon dioxide and silicon oxynitride thin films.
Materials:
SiO2, alpha-Si, and SiNx.
Specification:
Up to 8‘’ wafers.
No load lock.
Max temperature 350˚C.
Base pressure 10x10-3 Torr.
Location:
Engineering Cleanroom, Wolfson building of Electrical Engineering.
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