Equipments Details
Description
Manufacturer and model:
RF Diode Sputtering System MRC 8620-VST.
Materials:
Au, Ag, Co, Cr, Cu, Ni, Ta, Ti, W, CF2, ITO, SO, SiO2, SiNx, TaN, TiN, TiO2.
Specification:
Up to 6‘’ wafers.
No load lock.
Base pressure 8x10-7Torr.
Working pressure 5x10-3 – 50x10-3 Torr.
3 targets.
Reactive sputtering with N2 and O2.
Substrate biasing possibility, also during sputtering process.
Location:
Room #301, Wolfson building of Electrical Engineering.
RF Diode Sputtering System MRC 8620-VST.
Materials:
Au, Ag, Co, Cr, Cu, Ni, Ta, Ti, W, CF2, ITO, SO, SiO2, SiNx, TaN, TiN, TiO2.
Specification:
Up to 6‘’ wafers.
No load lock.
Base pressure 8x10-7Torr.
Working pressure 5x10-3 – 50x10-3 Torr.
3 targets.
Reactive sputtering with N2 and O2.
Substrate biasing possibility, also during sputtering process.
Location:
Room #301, Wolfson building of Electrical Engineering.
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