Equipments Details
Description
Manufacturer and model:
Plasmatherm SLR-770 DRIE Bosch Process.
Description:
MEMS and nanotechnology applications frequently require features with relatively high aspect ratios and anisotropic profiles to be created in silicon. This is usually accomplished using the Bosch process, also known as deep silicon etching (DSE) or deep reactive ion etching (DRIE).
Specification:
Recommended for MEMS production.
Including Bosch process - the cyclic isotropic etching and fluorocarbon-based protection film deposition.
The typical etching rate for 4 inch silicon wafer: ~0.21 um/cycle.
Location:
Engineering Cleanroom, Wolfson building of Electrical Engineering.
Plasmatherm SLR-770 DRIE Bosch Process.
Description:
MEMS and nanotechnology applications frequently require features with relatively high aspect ratios and anisotropic profiles to be created in silicon. This is usually accomplished using the Bosch process, also known as deep silicon etching (DSE) or deep reactive ion etching (DRIE).
Specification:
Recommended for MEMS production.
Including Bosch process - the cyclic isotropic etching and fluorocarbon-based protection film deposition.
The typical etching rate for 4 inch silicon wafer: ~0.21 um/cycle.
Location:
Engineering Cleanroom, Wolfson building of Electrical Engineering.
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